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PMBD914,235 high power Single high speed switching diode 100 V repetitive peak reverse voltage

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PMBD914,235 high power Single high speed switching diode 100 V repetitive peak reverse voltage

Model Number : PMBD914

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9300pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Diode 100 V 215mA Surface Mount TO-236AB

repetitive peak reverse voltage : 100 V

reverse voltage : 100 V

forward current : 215 mA

total power dissipation Tamb ≤ 25 °C : 250 mW

junction temperature : 150 °C

storage temperature : −65 to +150 °C

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PMBD914 high power Single high speed switching diode 100 V repetitive peak reverse voltage

PMBD914

Single high-speed switching diode

General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Features

■ High switching speed: trr ≤ 4 ns

■ Low capacitance: Cd ≤ 1.5 pF

■ Low leakage current

■ Reverse voltage: VR ≤ 100 V

■ Repetitive peak reverse voltage: VRRM ≤ 100 V

■ Small SMD plastic package

Applications

■ High-speed switching

Quick reference data

Symbol Parameter Conditions Min Typ Max Unit
IF forward current [1] - - 215 mA
VR reverse voltage - - 100 V
trr reverse recovery time [2] - - 4 ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 100 V
VR reverse voltage - 100 V
IF forward current [1] - 215 mA
IFRM repetitive peak forward current - 500 mA

IFSM

non-repetitive peak forward current

square wave [2]
tp = 1 µs - 4 A
tp = 1 ms - 1 A
tp = 1 s - 0.5 A
Ptot total power dissipation Tamb ≤ 25 °C [1][3] - 250 mW
Tj junction temperature - 150 °C
Tstg storage temperature −65 +150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Tj = 25 °C prior to surge.

[3] Soldering point of cathode tab.

Reverse recovery time test circuit and waveforms

Forward recovery voltage test circuit and waveforms

Package outline SOT23 (TO-236AB)


Product Tags:

diode rectifier circuit

      

signal schottky diode

      
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